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Features:
Form Factor: PCl Express Card Interface: PCI-Express 3.0 x4, NVMe 1.3 Total Capacity: 512GB* Sequential Read Speed : up to 3480 MB/s* Sequential Write speed : up to 2100 MB/s* TRIM & S.M.A.R.T supported AES 256-bit Hardware Encryption Self-Encrypting Drive (SED)Specifications:
Interface PCI-Express 3.0 x4, NVMe 1.3 Form Factor PCl Express Card Total Capacity 512GB Warranty Limited 5-years or 800TBW NAND 3D TLC ToshiBa BiCS3 External DDR Cache 512MB Sequential Read speed Up to 3480 MB/s Sequential Write speed Up to 2100 MB/s Random Read IOPS up to 360K Random Write IOPS up to 510K Mean time between failure (MTBF) 1.8 million hours Power Consumption (Active) Average : R : 5.9W; W : 4.6W Power Consumption (Idle) 485mW Temperature (Operating) 0°C to 70°C Temperature (Storage) -40°C to 85°C Note * Test system configuration: configuration may vary by models, we will choose the latest platform for verification.Features:
Form Factor: PCl Express Card Interface: PCI-Express 3.0 x4, NVMe 1.3 Total Capacity: 512GB* Sequential Read Speed : up to 3480 MB/s* Sequential Write speed : up to 2100 MB/s* TRIM & S.M.A.R.T supported AES 256-bit Hardware Encryption Self-Encrypting Drive (SED)Specifications:
Interface PCI-Express 3.0 x4, NVMe 1.3 Form Factor PCl Express Card Total Capacity 512GB Warranty Limited 5-years or 800TBW NAND 3D TLC ToshiBa BiCS3 External DDR Cache 512MB Sequential Read speed Up to 3480 MB/s Sequential Write speed Up to 2100 MB/s Random Read IOPS up to 360K Random Write IOPS up to 510K Mean time between failure (MTBF) 1.8 million hours Power Consumption (Active) Average : R : 5.9W; W : 4.6W Power Consumption (Idle) 485mW Temperature (Operating) 0°C to 70°C Temperature (Storage) -40°C to 85°C Note * Test system configuration: configuration may vary by models, we will choose the latest platform for verification.